Difference between revisions of "File:S15 146 Grp9 circuit isolation phototransistors.PNG"

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(Photo-transistor circuit isolation to prevent I/O pins from being damaged by R*L effects of inductive loads.)
 
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Latest revision as of 23:38, 25 May 2015

Photo-transistor circuit isolation to prevent I/O pins from being damaged by R*L effects of inductive loads.

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current23:38, 25 May 2015Thumbnail for version as of 23:38, 25 May 2015540 × 438 (45 KB)146 user4 (talk | contribs)Photo-transistor circuit isolation to prevent I/O pins from being damaged by R*L effects of inductive loads.
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Vertical resolution 37.8 dpc
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